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Tetrakis(dimethylamido)hafnium(IV)

packaged for use in deposition systems

Synonym(s):

TDMAH, Tetrakis(dimethylamino)hafnium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Hf
CAS Number:
19782-68-4
Molecular Weight:
354.79
MDL number:
MFCD01862473
UNSPSC Code:
12352300
PubChem Substance ID:
24884811
NACRES:
NA.23

Quality Level

100

assay

≥99.99% (trace metals analysis)

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

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General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.

Application

Precursors Packaged for Depositions Systems
Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.

pictograms

FlameCorrosion
GHS02,GHS05

signalword

Danger

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

supp_hazards

EUH014

Storage Class

4.3 - Hazardous materials, which set free flammable gases upon contact with water

wgk_germany

WGK 3

flash_point_f

109.4 °F - closed cup

flash_point_c

43 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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High Purity Metalorganic Precursors for CPV Device Fabrication
Rushworth S
Material Matters, 5(4) null
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Hausmann DM, Gordon RG
Journal of Crystal Growth, 249, 251-261 (2003)
Applied Physics Letters, 91, 193503-193503 (2007)
The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition
Monsma D, Becker J
Material Matters, 1(3), 5-5 (2006)

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