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104914

Sigma-Aldrich

Dichloromethylvinylsilane

97%

Synonym(s):

Methylvinyldichlorosilane

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About This Item

Linear Formula:
H2C=CHSi(CH3)Cl2
CAS Number:
Molecular Weight:
141.07
Beilstein/REAXYS Number:
1740822
EC Number:
MDL number:
UNSPSC Code:
12352100
PubChem Substance ID:
NACRES:
NA.22

vapor density

>1 (vs air)

Quality Level

assay

97%

refractive index

n20/D 1.430 (lit.)

bp

92 °C (lit.)

density

1.08 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

C[Si](Cl)(Cl)C=C

InChI

1S/C3H6Cl2Si/c1-3-6(2,4)5/h3H,1H2,2H3

InChI key

YLJJAVFOBDSYAN-UHFFFAOYSA-N

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General description

Dichloromethylvinylsilane reacts with dimethylsulphide borane to form organosilylborane, which further gets ammonolysized to form the polymer of the SiBCN.

Application

Dichloromethylvinylsilane was used as single molecular precursor for the deposition of β-SiC thin films and β -SiC nanowires by metalorganic chemical vapor deposition on bare Si 100 and Ni-coated Si 100 substrates. Dichloromethylvinylsilane was used in the synthesis and characterization of Tris(1-(dichloro(methyl)silyl)ethyl)borane,monomer.

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Danger

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2 - Skin Corr. 1B

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Storage Class

3 - Flammable liquids

wgk_germany

WGK 1

flash_point_f

38.1 °F - closed cup

flash_point_c

3.4 °C - closed cup

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter


Certificates of Analysis (COA)

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1 of 3

Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane.
Kang B-C, et al.
J. Vac. Sci. Technol. B, 23(4), 1722-1725 (2005)
Synthesis and Structure Characterization of Amorphous SiBCN Ceramic Precursors.
Yajing L and Yue Z.
Rare Metals Materials and Engineering, 40, 234-237 (2011)
H Yamakita et al.
Radioisotopes, 33(8), 513-518 (1984-08-01)
Poly(methylvinylsiloxane)-bonded silica gel was synthesized by condensation reaction between silica gel and the hydrolysis product of methylvinyldichlorosilane. Graft polymerization of styrene or indene onto poly(methylvinylsiloxane)-bonded silica gel was carried out by gamma-ray irradiation and compared with that onto silica gel.
Influence of the Precursor Cross-Linking Route on the Thermal Stability of Si- B- C- O Ceramics.
Ischenko V, et al.
Chemistry of Materials, 20(22), 7148-7156 (2008)

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