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799300

Sigma-Aldrich

Aluminum oxide

activated, acidic, Brockmann I, free-flowing, Redi-Dri™

Synonym(s):

Alumina

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About This Item

Linear Formula:
Al2O3
CAS Number:
1344-28-1
Molecular Weight:
101.96
EC Number:
215-691-6
MDL number:
MFCD00003424
UNSPSC Code:
12352311
PubChem Substance ID:
329768702
NACRES:
SB.52

grade

Brockmann I
activated
standard grade

Quality Level

100

product line

Redi-Dri™

form

powder

quality

free-flowing

manufacturer/tradename

CAMAG 504-C-I

surface area

150 m2/g , +/- 10%

impurities

<0.03% Fe2O3
<0.03% SiO2
<0.4% Na2O

particle size

50-300 mesh

pore size

58 Å pore size

pH

4.5±0.5 ( in H2O)

mp

2040 °C (lit.)

anion traces

chloride (Cl-): ≤0.03 (mval/g)

SMILES string

O=[Al]O[Al]=O

InChI

1S/2Al.3O

InChI key

TWNQGVIAIRXVLR-UHFFFAOYSA-N

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General description

Brockmann aluminum oxides are suitable for column chromatography and adsorptive filtration.

Legal Information

Redi-Dri is a trademark of Sigma-Aldrich Co. LLC

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Micron-scale resolution optical tomography of entire mouse brains with confocal light sheet microscopy.
Silvestri L, et al.
Journal of Visualized Experiments, 80, e50696-e50696 (2013)
Conduction Characteristics of the Lithium Iodide-Aluminum Oxide Solid Electrolytes.
Liang CC.
Journal of the Electrochemical Society, 120(10), 1289-1292 (1973)
Thermoanalytical studies of water on activated alumina, Brockmann I-V,(acid, neutral, basic) from- 60? to+ 700? C.
Hampson JW and Bleam WF.
Thermochimica Acta, 288(1), 179-189 (1996)
Prescott R and Graham MJ.
Oxidation of Metals, 38(3-4), 233-254 (1992)
Chien-Chih Lin et al.
Nanoscale, 5(17), 8090-8097 (2013-07-25)
We demonstrated a promising route for enhancing temperature sensitivity, improving saturation voltage, and reducing power consumption of the MOS(p) tunneling temperature sensors by introducing ultrathin Al2O3 into the dielectric stacks. Detailed illustrations of the working mechanism and device concept are
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