Skip to Content
Merck
All Photos(3)

Documents

264032

Sigma-Aldrich

Indium

powder, −100 mesh, 99.99% trace metals basis

Synonym(s):

Indium element

Sign Into View Organizational & Contract Pricing
All Photos(3)

About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
7440-74-6
Molecular Weight:
114.82
EC Number:
231-180-0
MDL number:
MFCD00134048
UNSPSC Code:
12141719
PubChem Substance ID:
24855900
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

100

Assay

99.99% trace metals basis

form

powder

resistivity

8.37 μΩ-cm

particle size

−100 mesh

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Application


  • Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).

  • Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).

  • The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).

Pictograms

FlameExclamation mark
GHS02,GHS07

Signal Word

Danger

Hazard Statements

H228,H315,H319,H332,H335

Hazard Classifications

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

WGK

WGK 3

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Customers Also Viewed

Slide 1 of 6

1 of 6

Indium foil, thickness 0.25&#160;mm, 99.995% trace metals basis

Sigma-Aldrich

264040

Indium

Phosphorus-doped graphene avg. no. of layers, 1 &#8209; 5

Sigma-Aldrich

900529

Phosphorus-doped graphene

Bismuth powder, &#8722;100&#160;mesh, &#8805;99.99% trace metals basis

Sigma-Aldrich

264008

Bismuth

Boron-doped graphene avg. no. of layers, 1 &#8209; 5

Sigma-Aldrich

900526

Boron-doped graphene

1-Iodo-2-(trimethylsilyl)acetylene 97%

Sigma-Aldrich

414670

1-Iodo-2-(trimethylsilyl)acetylene

Potassium triethylborohydride solution 1.0&#160;M in THF

Sigma-Aldrich

213438

Potassium triethylborohydride solution

A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
View All Related Papers

Articles

Discovery and Single Crystal Growth of Lanthanide Intermetallics—Interplay of Synthesis and Physical Properties

Solid state and materials chemistry have made a tremendous impact and have experienced growth in recent years, particularly for rare earthcontaining materials.

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service