Direkt zum Inhalt
Merck
Alle Fotos(2)

Dokumente

725544

Sigma-Aldrich

Tetrakis(ethylmethylamid)hafnium(IV)

packaged for use in deposition systems

Synonym(e):

TEMAH, Tetrakis-(ethylmethylamino)-hafnium(IV)

Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise
Alle Fotos(2)

About This Item

Lineare Formel:
[(CH3)(C2H5)N]4Hf
CAS-Nummer:
352535-01-4
Molekulargewicht:
410.90
MDL-Nummer:
MFCD03427130
UNSPSC-Code:
12352300
PubChem Substanz-ID:
329764168
NACRES:
NA.23

Qualitätsniveau

100

Form

liquid

Eignung der Reaktion

core: hafnium
reagent type: catalyst

bp

78 °C/0.01 mmHg (lit.)

mp (Schmelzpunkt)

<-50 °C

Dichte

1.324 g/mL at 25 °C (lit.)

Lagertemp.

2-8°C

SMILES String

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChIKey

NPEOKFBCHNGLJD-UHFFFAOYSA-N

Suchen Sie nach ähnlichen Produkten? Aufrufen Leitfaden zum Produktvergleich

Verwandte Kategorien

Allgemeine Beschreibung

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Anwendung

Precursors Packaged for Depositions Systems
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.

Leistungsmerkmale und Vorteile

This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems.

  • Steel cylinder connected to 316 stainless steelball-valve
  • 1/4 inch male Swagelok VCR connections

Signalwort

Danger

Gefahreneinstufungen

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1

Zielorgane

Respiratory system

Zusätzliche Gefahrenhinweise

EUH014

Lagerklassenschlüssel

4.3 - Hazardous materials, which set free flammable gases upon contact with water

WGK

WGK 3

Flammpunkt (°F)

51.8 °F - closed cup

Flammpunkt (°C)

11 °C - closed cup

Analysenzertifikate (COA)

Suchen Sie nach Analysenzertifikate (COA), indem Sie die Lot-/Chargennummer des Produkts eingeben. Lot- und Chargennummern sind auf dem Produktetikett hinter den Wörtern ‘Lot’ oder ‘Batch’ (Lot oder Charge) zu finden.

Besitzen Sie dieses Produkt bereits?

In der Dokumentenbibliothek finden Sie die Dokumentation zu den Produkten, die Sie kürzlich erworben haben.

Die Dokumentenbibliothek aufrufen

Kunden haben sich ebenfalls angesehen

Slide 1 of 4

1 of 4

Trimethyl(methylcyclopentadienyl)platin(IV) packaged for use in deposition systems

Sigma-Aldrich

697540

Trimethyl(methylcyclopentadienyl)platin(IV)

Trimethylaluminium packaged for use in deposition systems

Sigma-Aldrich

663301

Trimethylaluminium

Siliziumtetrachlorid packaged for use in deposition systems

Sigma-Aldrich

688509

Siliziumtetrachlorid

Tetrakis(dimethylamido)titan(IV) 99.999% trace metals basis

Sigma-Aldrich

469858

Tetrakis(dimethylamido)titan(IV)

Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water

Artikel

The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition

igma-Aldrich.com presents an article regarding the savannah ALD system - an excellent tool for atomic layer deposition.

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

High Purity Metalorganic Precursors for CPV Device Fabrication

High Purity Metalorganic Precursors for CPV Device Fabrication

Nanowire Synthesis: From Top-Down to Bottom-Up

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..

Setzen Sie sich mit dem technischen Dienst in Verbindung.