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Merck

264032

Sigma-Aldrich

Indium

powder, −100 mesh, 99.99% trace metals basis

Synonym(e):

Indium element

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About This Item

Empirische Formel (Hill-System):
In
CAS-Nummer:
Molekulargewicht:
114.82
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12141719
PubChem Substanz-ID:
NACRES:
NA.23

Dampfdruck

<0.01 mmHg ( 25 °C)

Qualitätsniveau

Assay

99.99% trace metals basis

Form

powder

Widerstandsfähigkeit

8.37 μΩ-cm

Partikelgröße

−100 mesh

mp (Schmelzpunkt)

156.6 °C (lit.)

Dichte

7.3 g/mL at 25 °C (lit.)

SMILES String

[In]

InChI

1S/In

InChIKey

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Anwendung


  • Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).

  • Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).

  • The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).

Piktogramme

FlameExclamation mark

Signalwort

Danger

Gefahreneinstufungen

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Zielorgane

Respiratory system

WGK

WGK 3

Persönliche Schutzausrüstung

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


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Indium foil, thickness 0.25&#160;mm, 99.995% trace metals basis

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264040

Indium

Phosphorus-doped graphene avg. no. of layers, 1 &#8209; 5

Sigma-Aldrich

900529

Phosphorus-doped graphene

Bismut powder, &#8722;100&#160;mesh, &#8805;99.99% trace metals basis

Sigma-Aldrich

264008

Bismut

Boron-doped graphene avg. no. of layers, 1 &#8209; 5

Sigma-Aldrich

900526

Boron-doped graphene

A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed

Artikel

Solid state and materials chemistry have made a tremendous impact and have experienced growth in recent years, particularly for rare earthcontaining materials.

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